Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations. DCT characterization reveals two prominent deep-level traps E1 (∼0.5 eV) E2 (∼0.6 the HEMT. measured spectrum analyzed at different trap-filling pulse durations (10 µs–100 ms) to obtain information of kinetics. As first step simulation, physical model parameters are calibrated by matching simulated DC characteristics experimental data. It shown that incorporating acceptor-type trap EC – 0.5 eV GaN quantitatively reproduces spectra over temperature range 25–100 °C. To explore effects, inspected varying activation energy, capture cross section, concentration trap.